डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AFGY120T65SPD-B4 | IGBT Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning
650 V, 120 A
AFGY120T65SPD-B4
Features
• AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.5 V (T |
ON Semiconductor |
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AFGY120T65SPD-B4 | IGBT | ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |