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A2I35H060GNR1 | RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor Technical Data
Document Number: A2I35H060N Rev. 0, 4/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed |
NXP |
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A2I35H060GNR1 | RF LDMOS Wideband Integrated Power Amplifiers | NXP |
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