A19T डाटा शीट PDF( Datasheet )

SMD Type MOSFET P-Channel Enhancement MOSFET KI2301T ■ Features ● VDS (V) =-12V ● ID =-2.8 A ● RDS(ON) ＜ 115mΩ (VGS =-4.5V) ● RDS(ON) ＜ 160mΩ (VGS =-2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device

UMW R UMW 3401C SOT-23 Plastic-Encapsulate MOSFETS UMW 3401C P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V   120 mΩ@-4.5V  150 mΩ@-2.5V   ID 2.5 A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE