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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
8810 | Dual N-Channel Enhancement Mode Power MOSFET HM8810E
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This |
H&M semi |
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8810 | Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The 8810 uses advanced trench technology to provide excellent R |
Tuofeng Semiconductor |
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