8205 डाटा शीट PDF( Datasheet )

8205 PRELIMINARY INFORMATION (subject to change without notice) December 6, 1999 NC OR ADJ* OUT LOW-DROPOUT REGULATORS — HIGH EFFICIENCY Designed specifically to meet the requirement for extended operation o

AiT Semiconductor Inc. www.ait-ic.com AM8205 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench technology to  provide excellent RDS(ON), low gate charge

REV. 1.9 FS8205-DS-19_EN AUG 2016 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fortune Semiconductor Corporation 富晶電子股份有限公司 23F.,No

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation wit

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A

N 沟道增强型功率 MOSFET 8205A/8205B/8205C 1. 描述 共漏极N沟道增强型功率场效应管8205A/8205B/ 8205C 具有快速开关、超低导通电阻和高性价比的特点。 8205A/8205B/8205C �

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a