60N321 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 60N321 | GT60N321 GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications Fourth Generation IGBT
Unit: mm
• FRD included between emitter and collector • Enhance |
 Toshiba Semiconductor |
|
| 60N321 | GT60N321 | Toshiba Semiconductor |
|
| 60N323 | Silicon N-Channel IGBT |  Toshiba |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |