डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
60N10 | N-Channel MOSFET Transistor isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
60N10
·FEATURES ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for r |
Inchange Semiconductor |
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60N100D | FGL60N100D FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also hav |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |