60N06 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-

UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristi

isc N-Channel MOSFET Transistor 60N06-14 ·DESCRIPTION ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perfor

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06-18 ·DESCRIPTION ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations f