डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array 4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) |
Hitachi Semiconductor |
|
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |