डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 |
Hitachi Semiconductor |
|
4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |