डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AK27 | Silicon N Channel MOS FET High Speed Power Switching 4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 1999 Features
• Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • Hig |
Hitachi Semiconductor |
|
4AK20 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AK23 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AK21 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AK27 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
|
4AK26 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AK25 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
|
4AK22 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |