डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AK19 | Silicon N Channel MOS FET High Speed Power Switching 4AK19
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-727 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 � |
Hitachi Semiconductor |
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4AK19 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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4AK17 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK18 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK16 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK15 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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