डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AK17 | Silicon N-Channel Power MOS FET Array 4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Cap |
Hitachi Semiconductor |
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4AK19 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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4AK17 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK18 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK16 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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4AK15 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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