डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4AJ11 | Silicon P-Channel Power MOS FET Array 4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Cap |
Hitachi Semiconductor |
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4AJ11 | Silicon P-Channel Power MOS FET Array | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |