| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR or VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature ( •) Pulse width limited by safe operating area July 1993 Val ue STP40N10 ST P4 0N 10 F I 100 100 ± 20 40 22 28 15 160 160 150 |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB140N10F4 STF140N10F4 STP140N10F4 ■ ■ ■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche teste |
|
|
|
|
CHONGQING PINGYANG |
N-CHANNEL MOSFET 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=25℃,unless otherwise n |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applicati |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Order code STP240N10F7 VDS RDS(on)max. ID 100 V 3.2 mΩ 110 A • Ultra low on-resistance • 100% avalanche tested Applications • High current switching applications Figure 1. Internal schematic diagram ' 7$% Description This N-channel Powe |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A D(TAB) D(TAB) Descri |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A D(TAB) D(TAB) Descri |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB140N10F4 STF140N10F4 STP140N10F4 ■ ■ ■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche teste |
|
|
|
|
STMicroelectronics |
Power MOSFET Type STB140N10F4 STF140N10F4 STP140N10F4 ■ ■ ■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche teste |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applicati |
|