डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
40N10 | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO- |
CHONGQING PINGYANG |
|
40N10 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
40N10
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max) |
Inchange Semiconductor |
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40N10 | DTU40N10 www.din-tek.jp
DT81
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) (Ω) 0.030 at VGS = 10 V 0.034 at VGS = 6 V ID (A) 40 37.5
FEATURES
• TrenchFET® Power MOSFETS • 175 °C Ju |
DinTek |
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40N10B | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO- |
CHONGQING PINGYANG |
|
40N10F | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO- |
CHONGQING PINGYANG |
|
40N10F7 | N-channel Power MOSFET STL40N10F7
N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STL40N10F7
VDS |
STMicroelectronics |
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40N10H | N-CHANNEL MOSFET 40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO- |
CHONGQING PINGYANG |
www.DataSheet.in | 2017 | संपर्क |