डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3SK297 | Silicon N-Channel Dual Gate MOS FET 3SK297
Silicon N-Channel Dual Gate MOS FET
ADE-208-389 1st. Edition
Application
UHF / VHF RF amplifier
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation
Out |
Hitachi Semiconductor |
|
3SK299 | RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD | NEC |
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3SK294 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
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3SK291 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
3SK293 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
3SK296 | Silicon N-Channel Dual-Gate MOSFET | Hitachi Semiconductor |
|
3SK297 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
3SK298 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
3SK295 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
3SK292 | Silicon N-Channel Dual Gate MOS Type FET | Toshiba Semiconductor |
|
3SK296 | N-Channel Dual-Gate MOSFET | Renesas |
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