3DD5011 डाटा शीट PDF( Datasheet )

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 主要参数 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.3

Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low frequency power transistor, is used to colour TV switching

Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011AH 1 Description： 3DD5011AH, silicon NPN low frequency power transistor, is used to colour TV switching