3DD15 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(

1 3DD1545 NPN , 21 3DD1545 2 2.1 2.2 TO-3P(H)IS Tamb= 25 - Ta=25 Tc=25 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 600 1500 5 5 3 50 150 -55 150 V V V A W Tamb= 25 17max 26.5max 4.5 15.5max 5.5max 3max 3.6 2m

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device perfor

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection ou

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflectio

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P 主要参数 MAIN CHARACTERISTICS 封装 Package TO-3P(H)IS BVCBO IC VCE(sat) tf 15

3DD157 型 NPN 硅低频大功率晶体管 参数符号 测试条件 PCM ICM 极 限 Tjm 值 Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO 直 ICBO 流 ICEO 参 IEBO 数 VBEsat VCEsat hFE TC=75℃ VCE=10V IC=1A ICB=3