3CD834 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor 3CD834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A ·Minimum Lot-to-

Dayan Technology Industry Co., Ltd. Shenzhen 3CD834 1. 2. 3. TO-220 4. 5. D880 Ta=25 VCBO VCEO VEBO IC PC Tj Tstg -120 -70 -7 -3 1.5 30 150 -55~150 V V V A W W Ta=25 Tc=25 6. Ta=25 Min -120 -70 -7 Max V V