डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3401 | P-Channel Enhancement Mode Power MOSFET HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device |
H&M Semiconductor |
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3401 | P-Channel MOSFET P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use |
CXW |
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3401 | MOSFET 3401
DESCRIPTION
The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in P |
GFD |
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