33N10 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust

FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS te