डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
30J121 | Silicon N-Channel IGBT GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT • Enhancement mode type |
Toshiba |
|
30J127 | 600V 200A IGBT MOSFET | ETC |
|
30J126 | Silicon N-Channel IGBT | Toshiba |
|
30J122A | Silicon N-Channel IGBT | Toshiba |
|
30J122 | Silicon N-Channel IGBT | Toshiba |
|
30J121 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |