| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Silicon N-Channel Junction FET 0.3+0.1 –0.0 3 0.15+0.10 –0.05 G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.25±0.10 2.1±0.1 5° 1 2 (0.65) (0.65) 1.3±0.1 I A |
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Panasonic Semiconductor |
N-Channel MOSFET q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings |
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