2SK429 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com

isc N-Channel MOSFET Transistor 2SK429L FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100% aval

isc N-Channel MOSFET Transistor 2SK429S FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 15V ·100% aval