डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK4108 | Silicon N-Channel MOSFET 2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)
z High forward |
Toshiba Semiconductor |
|
2SK4108 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK4108
FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.27Ω(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |