2SK3891-01R डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3891-01R FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche te

2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary br