डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK387 | N-Channel Transistor :
SILICON N CHANNEL MOS TYPE for-MOS)
)
2SK387
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
FEATURES
. Low Drain-Source ON Resistance : |
Toshiba |
|
2SK387 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu |
Inchange Semiconductor |
|
2SK3870 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3870
FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage
: VDSS= 230V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 76mΩ(Max) ·100% avalanche tested |
Inchange Semiconductor |
|
2SK3870-01 | N-CHANNEL SILICON POWER MOSFET 2SK3870-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
TO-220AB
Features High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low |
Fuji |
|
2SK3872-01L | N-CHANNEL SILICON POWER MOSFET 2SK3872-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low dr |
Fuji |
|
2SK3872-01L | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3872-01L
FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage
: VDSS= 230V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 76mΩ(Max) ·100% avalanche te |
Inchange Semiconductor |
|
2SK3872-01S | N-CHANNEL SILICON POWER MOSFET 2SK3872-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features High speed switching No secondary breakdown Avalanche-proof
Low on-resistance Low dr |
Fuji |
www.DataSheet.in | 2017 | संपर्क |