2SK368 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS =

isc N-Channel MOSFET Transistor 2SK3680 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performa

www.DataSheet4U.com 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-res

isc N-Channel MOSFET Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic

2SK3681-01 FUJI POWER MOSFET Super FAP-G Series 200401 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re

isc N-Channel MOSFET Transistor 2SK3682-01 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100% a