2SK3651-01R डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3651-01R FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) @ VGS= 10V ·100%

www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Out