2SK364 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK364 Unit: mm · High breakdown voltage: VGDS

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3640 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent

SMD Type Transistors IC 100V N-Channel PowerTrench MOSFET KDD3670 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3641 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent

SMD Type IC MOSFET MOS Field Effect Transistor 2SK3641 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Low on-state resistance RDS(on)1 =14 m RDS(on)2 =25 m MAX. (VGS = 10

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3642 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3643 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent