2SK363 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown voltage: VGD

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV) www.DataSheet4U.com 2SK3633 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON)

iscN-Channel MOSFET Transistor 2SK3633 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lo

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent

SMD Type www.DataSheet4U.com IC MOSFET MOS Field Effect Transistor 2SK3634 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage: VDSS = 200 V Gate voltage rating: RDS(on) = 0.60 30 V +0.2 9.70-0

isc N-Channel MOSFET Transistor 2SK3634D FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100% avala

isc N-Channel MOSFET Transistor 2SK3634I FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100% avala