2SK3606-01 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3606-01 FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) @ VGS= 10V ·100% a

2SK3606-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (