2SK360 डाटा शीट PDF( Datasheet )

2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Dra

www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWE

www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWE

www.DataSheet4U.com 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWE

isc N-Channel MOSFET Transistor 2SK3600L FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% aval

isc N-Channel MOSFET Transistor 2SK3600S FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100% aval

www.DataSheet4U.com 2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS FET MOSFET N-CHANNEL