डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK359 | N-Channel MOSFET 2SK359
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
TO-92 (2)
1. Gate 2. Source 3. Drain 3 2 1
2SK359
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage |
Hitachi Semiconductor |
|
2SK3590-01 | N-CHANNEL SILICON POWER MOSFET 2SK3590-01
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (m |
Fuji Electric |
|
2SK3590-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3590-01
FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
|
2SK3591 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and |
INCHANGE |
|
2SK3591-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3591-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings |
Fuji Electric |
|
2SK3592-01L | N-CHANNEL SILICON POWER MOSFET www.DataSheet4U.com
2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWE |
Fuji Electric |
|
2SK3592-01S | N-CHANNEL SILICON POWER MOSFET www.DataSheet4U.com
2SK3592-01L,S,SJ
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWE |
Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |