2SK3572 डाटा शीट PDF( Datasheet )

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteri

SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Features 4.5V drive available. +0.2 8.7-0.2 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 RDS(on)1 = 5.7m Low gate charge MAX. (VGS = 10 V, I

isc N-Channel MOSFET Transistor 2SK3572 FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avalanc

isc N-Channel MOSFET Transistor 2SK3572-S FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100% ava

isc N-Channel MOSFET Transistor 2SK3572-Z FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100% ava

isc N-Channel MOSFET Transistor 2SK3572-ZK FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) @ VGS= 10V ·100% av