2SK3571 डाटा शीट PDF( Datasheet )

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteri

isc N-Channel MOSFET Transistor 2SK3571 FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avalanc

isc N-Channel MOSFET Transistor 2SK3571-S FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avala

isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% avala

isc N-Channel MOSFET Transistor 2SK3571-ZK FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V ·100% aval