डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK357 | N-Channel MOSFET |
Toshiba |
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2SK357 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK357
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Fast Switching Speed
APPLIC |
Inchange Semiconductor |
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2SK3570 | Switching N-Channel MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteri |
NEC Electronics |
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2SK3570 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3570
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% avalan |
Inchange Semiconductor |
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2SK3570-S | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3570-S
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
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2SK3570-Z | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3570-Z
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
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2SK3570-ZK | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3570-ZK
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 20V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12mΩ(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |