2SK350 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK350 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations

isc N-Channel MOSFET Transistor 2SK3501 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100% aval

2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB

2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F

SMD Type MOSFET N-Channel MOSFET 2SK3503 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 0.36±0.1 ■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven www.DataSheet4