2SK3491 डाटा शीट PDF( Datasheet )

Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm 2083B [2SK3491] 6.5 5.0 4 1.5 Low ON-resistance. Low Q

isc N-Channel MOSFET Transistor 2SK3491D FEATURES ·Drain Current : ID= 1A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max) @ VGS= 10V ·100% avalan

isc N-Channel MOSFET Transistor 2SK3491I FEATURES ·Drain Current : ID= 1A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max) @ VGS= 10V ·100% avalan