2SK349 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance an

www.DataSheet4U.com Ordering number : EN9085 2SK3490 N-Channel Silicon MOSFET 2SK3490 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V dri

Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm 2083B [2SK3491] 6.5 5.0 4 1.5 Low ON-resistance. Low Q

isc N-Channel MOSFET Transistor 2SK3491D FEATURES ·Drain Current : ID= 1A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max) @ VGS= 10V ·100% avalan

isc N-Channel MOSFET Transistor 2SK3491I FEATURES ·Drain Current : ID= 1A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11Ω(Max) @ VGS= 10V ·100% avalan

2SK3492 Ordering number : ENN8279 2SK3492 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications A