डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3418 | Silicon N Channel MOS FET 2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 m typ.
• 4 V gate drive device • High speed switching
Outline
TO-220AB
D
G
S
ADE-208-941 (Z) 1st. |
Hitachi Semiconductor |
|
2SK3418 | Silicon N-Channel MOSFET 2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive • High speed switching
Outline
TO-220AB
D
G
S1 2 3
Absolut |
Renesas |
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