डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3270-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3270-01
FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
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2SK3270-01 | N-Channel MOSFET 2SK3270-01
Trench Gate MOSFET
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Outline Drawing
> Applications
- Mo |
Fuji Electric |
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