डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK320 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK320
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed
APPLICA |
Inchange Semiconductor |
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2SK320 | (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET www.DataSheet4U.com
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Hitachi Semiconductor |
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2SK320 | (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET www.DataSheet4U.com
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Hitachi Semiconductor |
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2SK3204 | N-Channel MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applicatio |
NEC |
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2SK3205 | N-Channel MOSFET 2SK3205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK3205
Switching Regulator Applications DC−DC Converter, and Motor Drive Applications
l 4 V gate drive l Low drain−sou |
Toshiba Semiconductor |
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2SK3207 | N-Channel MOSFET 2SK3207
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features
• Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate d |
Hitachi Semiconductor |
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2SK3209 | N-Channel MOSFET 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate |
Hitachi Semiconductor |
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