2SK3141 डाटा शीट PDF( Datasheet )

2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device ca

2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS P