2SK308 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK308 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100% avalan

OEM: Hitachi MOSFET Transistor 2SK308 / K308 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK308 / K308 Datasheet Datasheet Rev. 2.0 – 09/

2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. �

2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Ou

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri