2SK3079 डाटा शीट PDF( Datasheet )

2SK3079 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3079 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) :

2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain