2SK304 डाटा शीट PDF( Datasheet )

Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, elect

Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf = 30ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.

Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown un

Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown un

Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown u

Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown un