| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 q C |
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