2SK302 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF (typ.) • Low noise figure: N

Power F-MOS FETs 2SK3022 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive

Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive

Power F-MOS FETs 2SK3024 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive

Power F-MOS FETs 2SK3025 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive

Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive

Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive